Document Type
Article
Publication Date
12-28-1992
Publisher
American Institute of Physics Publishing
Abstract
Yba2Cu3O7-δ/yttria‐stabilized zirconia (YSZ)/silicon superconductor–insulator–semiconductor capacitors are characterized with capacitance‐voltage (C‐V) measurements at different gate‐voltage sweep rates and under bias‐temperature cycling. It is shown that ionic conduction in YSZ causes both hysteresis and stretch‐out in room‐temperature C‐V curves. A thermally activated process with an activation energy of about 39 meV in YSZ and/or at YSZ/Si interface is attributed to trapping/detrapping mechanisms in the SiOx interfacial layer between YSZ and Si. The negative mobile ions in YSZ can be moved by an applied electric field at room temperature and then ‘‘frozen’’ with decreasing temperature, giving rise to adjustable threshold voltages at low temperatures.
Recommended Citation
J. Qiao, E.M. Ajimine, P.P. Patel, G.L. Giese, C.Y. Yang, and D.K. Fork, “Thermally Activated Reversible Threshold Shifts in YBa2Cu3O7-δ/Yttria-Stabilized Zirconia/Si Capacitors,” Applied Physics Letters 61, 3184-3186 (1992). https://doi.org/10.1063/1.107953
Comments
Copyright © 1992 American Institute of Physics Publishing. Reprinted with permission.