Thermally Activated Reversible Threshold Shifts in Yba₂Cu₃O_7-δ/Yttria-Stabilized Zirconia/Si Capacitors

Authors

Jianmin Qiao
Eric M. Ajimine
Paresh P. Patel
Geoffrey L. Giese
Cary Y. Yang, Santa Clara UniversityFollow

Document Type

Article

Publication Date

12-28-1992

Publisher

American Institute of Physics Publishing

Abstract

Yba₂Cu₃O_7-δ/yttria‐stabilized zirconia (YSZ)/silicon superconductor–insulator–semiconductor capacitors are characterized with capacitance‐voltage (C‐V) measurements at different gate‐voltage sweep rates and under bias‐temperature cycling. It is shown that ionic conduction in YSZ causes both hysteresis and stretch‐out in room‐temperature C‐V curves. A thermally activated process with an activation energy of about 39 meV in YSZ and/or at YSZ/Si interface is attributed to trapping/detrapping mechanisms in the SiO_x interfacial layer between YSZ and Si. The negative mobile ions in YSZ can be moved by an applied electric field at room temperature and then ‘‘frozen’’ with decreasing temperature, giving rise to adjustable threshold voltages at low temperatures.

Comments

Copyright © 1992 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

J. Qiao, E.M. Ajimine, P.P. Patel, G.L. Giese, C.Y. Yang, and D.K. Fork, “Thermally Activated Reversible Threshold Shifts in YBa2Cu3O7-δ/Yttria-Stabilized Zirconia/Si Capacitors,” Applied Physics Letters 61, 3184-3186 (1992). https://doi.org/10.1063/1.107953