Improved Crystalline Quality of Si_1-xGe_x Formed by Low-temperature Germanium Ion Implantation

Authors

Ken-Ichi Shoji
Akira Fukami
Takahiro Nagano
Takashi Tokuyama
Cary Y. Yang, Santa Clara UniversityFollow

Document Type

Article

Publication Date

1-27-1992

Publisher

American Institute of Physics Publishing

Abstract

Improvement of crystalline quality in Si_1-xGe_x formed by germanium ion implantation has been found. End‐of‐range defects were drastically reduced in number by lowering the substrate temperature during implantation with doses on the order of 1016 cm−2. This improvement was confirmed by electrical characterization of p‐n junctions formed in the SiGe layer as well as by transmission electron microscopy.

Comments

Copyright © 1992 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

K. Shoji, A. Fukami, T. Nagano, T. Tokuyama, and C.Y. Yang, “Improved Crystalline Quality of Si_1-xGe_x Formed by Low-temperature Germanium Ion Implantation,” Applied Physics Letters 60, 451-453 (1992). https://doi.org/10.1063/1.106631