Properties of Schottky Contacts of Aluminum on Strained Si_1-x-yGe_xC_y Layers

Authors

Jian Mi
Ashawant Gupta
Cary Y. Yang, Santa Clara UniversityFollow

Document Type

Article

Publication Date

12-9-1996

Publisher

American Institute of Physics Publishing

Abstract

Schottky contacts of Al/Si_1-x-yGe_xC_y were fabricated using conventional Si technology. Effects of thermal processing of the alloys on the electrical properties of the Al/Si_1-x-yGe_xC_y Schottky diodes were investigated. Current–voltage (I–V), capacitance–voltage (C–V), and x‐ray diffraction measurements were performed. These thick alloy films (100–150 nm) experienced strain relaxation upon annealing at 700 °C. Nearly ideal I–V and C–V behaviors were obtained for strain‐compensated samples. I–V and C–Vcharacteristics show evidence of dislocation‐related traps for strain‐relaxed samples. Carbon incorporation improves the I–V and C–V characteristics by lessening the extent of lattice relaxation due to thermal processing.

Comments

Copyright © 1996 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

J. Mi, A. Gupta, C.Y. Yang, J. Zhu, P.K.L. Yu, P. Warren, and M. Dutoit, “Properties of Schottky Contacts of Aluminum on Strained Si_1-x-yGe_xC_y Layers,” Applied Physics Letters 69, 3743-3745 (1996). https://doi.org/10.1063/1.117208