Structural Characterization of Rapid Thermal Oxidized Si_1−x−yGe_xC_y Alloy Films Grown by Rapid Thermal Chemical Vapor Deposition

Authors

W. K. Choi
J. H. Chen
L. K. Bera
W. Feng
K. L. Pey
J. Mi
Cary Y. Yang, Santa Clara UniversityFollow
A. Ramam
S. J. Chua
J. S. Pan
A. T.S. Wee
R Liu

Document Type

Article

Publication Date

1-1-2000

Publisher

American Institute of Physics Publishing

Abstract

The structural properties of as-grown and rapid thermal oxidized Si_1−x−yGe_xC_y epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si_1−x−yGe_xC_y system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si_1−x−yGe_xC_y film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si_1−xGe_x films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films.

Comments

Copyright © 2000 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

W.K. Choi, J.H. Chen, L.K. Bera, W. Feng, K.L. Pey, J. Mi, C.Y. Yang, A. Ramam, S.J. Chua, J.S. Pan, A.T.S. Wee, and R. Liu, “Structural Characterization of Rapid Thermal Oxidized Si_1−x−yGe_xC_y Alloy Films grown by Rapid Thermal Chemical Vapor Deposition,” Journal of Applied Physics 87, 192-197 (2000).