Measurement of Interface States Parameters of Si_1-x-yGe_xC_y/TiW Schottky Contacts using Schottky Capacitance Spectroscopy

Authors

M. Zamora
G. K. Reeves
G. Gazecki
Jian Mi
Cary Y. Yang, Santa Clara UniversityFollow

Document Type

Article

Publication Date

4-1999

Publisher

Elsevier B. V.

Abstract

The interface states parameters of density, distribution and capture cross-section for Si1−x−yGexCy/TiW Schottky contacts has been found from forward bias capacitance measurements using the Schottky capacitance spectroscopy (SCS) technique. It was found that the interface states parameters strongly depend on the composition and quality of the Si1−x−y GexCy alloy layer. `Negative capacitance' effects, observed for low measurement frequencies, limit the application of the Schottky diode model used to calculate the interface states parameters.

Recommended Citation

M. Zamora, G.K. Reeves, G. Gazecki, J. Mi, and C.Y. Yang, “Measurement of Interface States Parameters of Si_1-x-yGe_xC_y/TiW Schottky Contacts using Schottky Capacitance Spectroscopy,” Solid-State Electronics 43, 801-808 (1999).