Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors

Authors

F. Ponce
C. Stanford
S. Yellin
W. Page
C. Fink
M. Pyle
B. Sadoulet
B. Serfass
S. L. Watkins
P. L. Brink
M. Cherry
R. Partridge
B. Cabrera
N. Kurinsky
Betty A. Young, Santa Clara UniversityFollow

Document Type

Article

Publication Date

2-13-2020

Publisher

American Physical Society

Abstract

A 0.93 g 1×1×0.4  cm³ SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. The detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140  V.

Comments

© 2020 American Physical Society. Reprinted with permission.

Recommended Citation

Ponce, F., Stanford, C., Yellin, S., Page, W., Fink, C., Pyle, M., Sadoulet, B., Serfass, B., Watkins, S. L., Brink, P. L., Cherry, M., Partridge, R., Cabrera, B., Kurinsky, N., & Young, B. A. (2020). Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors. Physical Review D, 101(3), 031101. https://doi.org/10.1103/PhysRevD.101.031101