Document Type
Article
Publication Date
2-2020
Publisher
AIP Publishing
Abstract
We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (∼15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. We also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.
Recommended Citation
Stanford, C., Moffatt, R. A., Kurinsky, N. A., Brink, P. L., Cabrera, B., Cherry, M., Insulla, F., Kelsey, M., Ponce, F., Sundqvist, K., Yellin, S., & Young, B. A. (2020). High-field spatial imaging of charge transport in silicon at low temperature. AIP Advances, 10(2), 025316. https://doi.org/10.1063/1.5131171
Comments
© 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).