Resistance Determination for Sub-100 nm Carbon Nanotube Vias

Authors

Changjian Zhou
Anshul A. Vyas, Santa Clara UniversityFollow
Patrick Wilhite
Phillip Wang
Mansun Chan
Cary Y. Yang, Santa Clara UniversityFollow

Document Type

Article

Publication Date

1-2015

Publisher

IEEE

Abstract

We report resistance results from carbon nanotube (CNT) vias of widths from 150 to 60 nm for potential application in integrated circuits technology. Selective CNT growth inside the vias with an areal density of 2×10¹¹ /cm² is achieved with a statistical average resistance of 1.7 kΩ with standard deviation between 420 Ω and 7.1 kΩ, and lowest resistance of 150 Ω for 60 nm vias, the lowest reported value for sub-100 nm-CNT vias. Statistical analysis yields a best-case projected value of 295 Ω for a 30 nm via, within one order of magnitude of its copper and tungsten counterparts.

Recommended Citation

C. Zhou, A.A. Vyas, P. Wilhite, P. Wang, M. Chan, and C.Y. Yang, “Resistance Determination for Sub-100 nm Carbon Nanotube Vias,” IEEE Electron Device Letters 36, 71-73 (2015).