Fabrication and characterization of carbon nanotube interconnect vias for next-generation technology nodes

Authors

Changjian Zhou
Anshul A. Vyas, Santa Clara UniversityFollow
Phillip Wang
Mansun Chan
Cary Y. Yang, Santa Clara UniversityFollow

Document Type

Conference Proceeding

Publication Date

3-16-2015

Publisher

IEEE

Abstract

We report the electrical characteristics of carbon nanotube (CNT) vias of diameters down to 30 nm for potential application as on-chip interconnects. A CNT packing or areal density of 1.2×10¹¹ /cm² inside a via has been obtained. The measured resistances of the CNT vias are used to project via resistances in sub-30 nm technology nodes.

Comments

IEEE International Conference on Electron Devices and Solid-State Circuits
18-20 June 2014
Chengdu, China

Recommended Citation

Changjian Zhou, Vyas, A., Wang, P., Chan, M., & Yang, C. Y. (2014). Fabrication and characterization of carbon nanotube interconnect vias for next-generation technology nodes. 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, 1–2. https://doi.org/10.1109/EDSSC.2014.7061272