Effects of Bias-Temperature Cycling on Electrical Characteristics of YBCO/YSZ/Si MIS Capacitors
Document Type
Article
Publication Date
6-1993
Publisher
Springer-Verlag
Abstract
A bias-temperature cycling technique is developed in the electrical characterization of YBa2Cu307−δ/yttria-stabilized zirconia (YSZ)/Si capacitors. This technique can be used to determine the electrical properties of the material components and their interfaces in the capacitor. Capacitance-voltage (C-V) measurements under no or weak illumination at temperatures ranging from 295 to 80K reveal that hysteresis due to mobile ions decreases with cooling and become vanishingly small at about 220K. Upon further cooling, a different mechanism due to traps in the YSZ/Si interface dominates the low-temperature hysteresis and stretchout of the C-V curves, which is evidenced by measurements for the illuminated device at 80K.
Recommended Citation
E.M. Ajimine, J. Qiao, G.L. Giese, P.P. Patel, M.A. Segovia, C.Y. Yang, and D.K. Fork, “Effects of Bias-Temperature Cycling on Electrical Characteristics of YBCO/YSZ/Si MIS Capacitors,” Journal of Electronic Materials 22, 681-684 (1993).
