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American Institute of Physics Publishing


The electrical characteristics of rapid thermal oxides on Si1−x−yGexCy layers are reported. X-ray photoelectron spectroscopy results indicate segregation of Ge at the SiO2/Si1−x−yGexCy interface, a thin GeO2 layer at the oxide surface, and elemental Ge at the interface and in the oxide. The interface state density of the samples ranges from 3.0×1011 to 3.6×1012 eV−1 cm−2. All the samples show electron trapping behavior and the trap generation rate decreases with increasing C concentration. The charge-to-breakdown value and the oxide breakdown field are higher for Si0.887Ge0.113 than for Si1−x−yGexCy samples, and these values decrease with increasing C concentration.


Copyright © 2000 American Institute of Physics Publishing. Reprinted with permission.



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