Document Type
Article
Publication Date
7-10-2000
Publisher
American Institute of Physics Publishing
Abstract
The electrical characteristics of rapid thermal oxides on Si1−x−yGexCy layers are reported. X-ray photoelectron spectroscopy results indicate segregation of Ge at the SiO2/Si1−x−yGexCy interface, a thin GeO2 layer at the oxide surface, and elemental Ge at the interface and in the oxide. The interface state density of the samples ranges from 3.0×1011 to 3.6×1012 eV−1 cm−2. All the samples show electron trapping behavior and the trap generation rate decreases with increasing C concentration. The charge-to-breakdown value and the oxide breakdown field are higher for Si0.887Ge0.113 than for Si1−x−yGexCy samples, and these values decrease with increasing C concentration.
Recommended Citation
L.K. Bera, W.K. Choi, W. Feng, C.Y. Yang, and J. Mi, “Electrical Properties of Rapid Thermal Oxides on Si1−x−yGexCy Films,” Applied Physics Letters 77, 256-258 (2000). https://doi.org/10.1063/1.126942
Comments
Copyright © 2000 American Institute of Physics Publishing. Reprinted with permission.