Electrical Properties of Rapid Thermal Oxides on Si_1−x−yGe_xC_y Films

Authors

L. K. Bera
W. K. Choi
W. Feng
Cary Y. Yang, Santa Clara UniversityFollow
J. Mi

Document Type

Article

Publication Date

7-10-2000

Publisher

American Institute of Physics Publishing

Abstract

The electrical characteristics of rapid thermal oxides on Si_1−x−yGe_xC_y layers are reported. X-ray photoelectron spectroscopy results indicate segregation of Ge at the SiO₂/Si_1−x−yGe_xC_y interface, a thin GeO₂ layer at the oxide surface, and elemental Ge at the interface and in the oxide. The interface state density of the samples ranges from 3.0×10¹¹ to 3.6×10¹² eV⁻¹ cm⁻². All the samples show electron trapping behavior and the trap generation rate decreases with increasing C concentration. The charge-to-breakdown value and the oxide breakdown field are higher for Si_0.887Ge_0.113 than for Si_1−x−yGe_xC_y samples, and these values decrease with increasing C concentration.

Comments

Copyright © 2000 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

L.K. Bera, W.K. Choi, W. Feng, C.Y. Yang, and J. Mi, “Electrical Properties of Rapid Thermal Oxides on Si_1−x−yGe_xC_y Films,” Applied Physics Letters 77, 256-258 (2000). https://doi.org/10.1063/1.126942