American Institute of Physics Publishing
Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1−x−yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800 °C did not improve the oxide quality as compared to 1000 °C.
W.K. Choi, W. Feng, L.K. Bera, C.Y. Yang, and J. Mi, “Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films,” Journal of Applied Physics 90, 5814-5824 (2001). https://doi.org/10.1063/1.1413715