Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si_1−x−yGe_xC_y films

Authors

W. K. Choi
W. Feng
L. K. Bera
Cary Y. Yang, Santa Clara UniversityFollow
J. Mi

Document Type

Article

Publication Date

12-1-2001

Publisher

American Institute of Physics Publishing

Abstract

Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si_1−x−yGe_xC_y sample with high-C content. The spectroscopic ellipsometry results showed that the E₁ gap increased and E₂ gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E₂ transitions reduced rapidly and the E₁ transition shifted to a lower energy. The reduction in the E₂ transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E₁ shift to lower energy. The electrical measurements showed that RTO at 800 °C did not improve the oxide quality as compared to 1000 °C.

Comments

Copyright © 2001 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

W.K. Choi, W. Feng, L.K. Bera, C.Y. Yang, and J. Mi, “Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si_1-x-yGe_xC_y films,” Journal of Applied Physics 90, 5814-5824 (2001). https://doi.org/10.1063/1.1413715