High-Frequency On-Chip Inductance Model
Document Type
Article
Publication Date
12-2002
Publisher
IEEE
Abstract
The effect of random signal lines on the on-chip inductance is quantitatively investigated, using an S-parameter-based methodology and a full wave solver, leading to an empirical model for high-frequency inductance. The results clearly indicate that the random signal lines as well as designated ground lines provide return paths for gigahertz-frequency signals. In particular, quasi TEM-wave-like propagation mode is observed above 10 GHz, revealing a unique relationship between capacitance and inductance of the signal line. Incorporating the random capacitive coupling effect, our frequency-dependent RLC model is confirmed to be valid up to 100 GHz.
Recommended Citation
S.-P. Sim, K. Lee, and C.Y. Yang, “High-Frequency On-Chip Inductance Model,” IEEE Electron Device Letters 23, 740-742 (2002).
