Charge-Carrier Collection in Superconducting Titanium Transition-Edge Sensors Deposited on High-Purity Silicon

Authors

Brian L. Dougherty
Blas Cabrera
Adrian T. Lee
Michael J. Penn
John G. Pronko
Betty A. Young, Santa Clara UniversityFollow

Document Type

Conference Proceeding

Publication Date

1993

Publisher

Springer

Abstract

We have found that superconducting titanium transition-edge sensors (TES) deposited on high-purity, monocrystalline silicon operate in two distinct “modes”, distinguished by different intrinsic gains. This difference may be due to changes in efficiency for prompt collection of the energy carried by electrons and holes; variously augmenting the dominant phonon-derived signals. Charge-carrier collection may be modulated by a space-charge region (Schottky-barrier) adjacent to the superconductor. We propose a model for this effect.

Chapter of

Phonon Scattering in Condensed Matter VII

Part of

Springer Series in Solid-State Sciences

Editor

Michael Meissner
Robert O. Pohl

Comments

Proceedings of the Seventh International Conference, Cornell University, Ithaca, New York, August 3–7, 1992

Recommended Citation

Dougherty, B. L., Cabrera, B., Lee, A. T., Penn, M. J., Pronko, J. G., & Young, B. A. (1993). Charge-Carrier Collection in Superconducting Titanium Transition-Edge Sensors Deposited on High-Purity Silicon. In M. Meissner & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII (pp. 484–485). Springer. https://doi.org/10.1007/978-3-642-84888-9_188