Charge-Carrier Collection by Superconducting Transition Edge Sensors Deposited on Silicon
Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct “modes”, distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes.
Dougherty, B. L., Cabrera, B., Lee, A. T., Penn, M. J., Young, B. A., & Pronko, J. G. (1993). Charge-carrier collection by superconducting transition-edge sensors deposited on silicon. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 333(2), 464–468. https://doi.org/10.1016/0168-9002(93)91193-Q