Charge-Carrier Collection by Superconducting Transition Edge Sensors Deposited on Silicon

Authors

Brian L. Dougherty
Blas Cabrera
Adrian T. Lee
Michael J. Penn
Betty A. Young, Santa Clara UniversityFollow
J. G. Pronko

Document Type

Article

Publication Date

9-1993

Publisher

Elsevier

Abstract

Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct “modes”, distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes.

Recommended Citation

Dougherty, B. L., Cabrera, B., Lee, A. T., Penn, M. J., Young, B. A., & Pronko, J. G. (1993). Charge-carrier collection by superconducting transition-edge sensors deposited on silicon. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 333(2), 464–468. https://doi.org/10.1016/0168-9002(93)91193-Q