Energy Deposition of Energetic Silicon Atoms Within a Silicon Lattice

Authors

P. Zecher
D. Wang
J. Rapaport
C. Jeff Martoff
Betty A. Young, Santa Clara UniversityFollow

Document Type

Article

Publication Date

4-1-1990

Publisher

American Physical Society

Abstract

The energy dependence of the ionization produced in silicon by recoiling silicon atoms was measured in the 4–54-keV energy interval. It is found that the fraction of the recoil energy that is dissipated as ionization follows an E^1/2 dependence which agrees well with the predictions of the theory of Lindhard et al. [Mat. Fys. Medd. 33, 10 (1963)].

Comments

Copyright © 1990 American Physical Society. Reprinted with permission.

Recommended Citation

Zecher, P., Wang, D., Rapaport, J., Martoff, C. J., & Young, B. A. (1990). Energy deposition of energetic silicon atoms within a silicon lattice. Physical Review A, 41(7), 4058–4061. https://doi.org/10.1103/PhysRevA.41.4058