Document Type
Article
Publication Date
5-6-2013
Publisher
American Institute of Physics Publishing
Abstract
We report ultrafast transient‐grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7700 cm2/V s or a conduction‐band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs.
Recommended Citation
Weber, C. P., Kittlaus, E. A., Mattia, K. B., Waight, C. J., Hagmann, J., Liu, X., … Furdyna, J. K. (2013). Rapid diffusion of electrons in GaMnAs. Applied Physics Letters, 102(18), 182402. https://doi.org/10.1063/1.4804578
Comments
Copyright © 2013 American Institute of Physics Publishing. Reprinted with permission.