Rapid diffusion of electrons in GaMnAs

Authors

Christopher P. Weber, Santa Clara UniversityFollow
Eric A. Kittlaus
Kassandra B. Mattia
Christopher J. Waight
J. Hagmann
X. Liu
M. Dobrowolska
J. K. Furdyna

Document Type

Article

Publication Date

5-6-2013

Publisher

American Institute of Physics Publishing

Abstract

We report ultrafast transient‐grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm²/s (60 cm²/s). Such rapid diffusion requires either an electronic mobility exceeding 7700 cm²/V s or a conduction‐band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs.

Comments

Copyright © 2013 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

Weber, C. P., Kittlaus, E. A., Mattia, K. B., Waight, C. J., Hagmann, J., Liu, X., … Furdyna, J. K. (2013). Rapid diffusion of electrons in GaMnAs. Applied Physics Letters, 102(18), 182402. https://doi.org/10.1063/1.4804578