Document Type
Article
Publication Date
2-2021
Publisher
AIP Publishing
Abstract
The use of cryogenic silicon as a detector medium for dark matter searches is gaining popularity. Many of these searches are highly dependent on the value of the photoelectric absorption cross section of silicon at low temperatures, particularly near the silicon bandgap energy, where the searches are most sensitive to low mass dark matter candidates. While such cross section data have been lacking from the literature, previous dark matter search experiments have attempted to estimate this parameter by extrapolating it from higher temperature data. However, discrepancies in the high temperature data have led to order-of-magnitude differences in the extrapolations. In this paper, we resolve these discrepancies by using a novel technique to make a direct, low temperature measurement of the photoelectric absorption cross section of silicon at energies near the bandgap (1.2 eV–2.8 eV).
Recommended Citation
“Photoelectric Absorption Cross Section of Silicon Near the Bandgap from Room Temperature to Tub- Kelvin Temperature”, C. Stanford, M.J. Wilson, B. Cabrera, M. Diamond, N. A. Kurinsky, R. A. Moffatt, F. Ponce, B. von Krosigk, B. A. Young, AIP Advances 11, 025120 (2021).
Comments
© 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).