Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors
Document Type
Article
Publication Date
2-2024
Publisher
Springer Nature
Abstract
To search for dark matter candidates with masses below (MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of 1–100 meV. In order to detect the charge signal produced by scattering or absorption events, SPLENDOR has designed a two-stage cryogenic HEMT-based amplifier with an estimated charge resolution approaching the single-electron level. A low-capacitance (1.6 pF) HEMT is used as a buffer stage at T = 10 mK to mitigate effects of stray capacitance at the input. The buffered signal is then amplified by a higher-capacitance (200 pF) HEMT amplifier stage at T = 4 K. Importantly, the design of this amplifier makes it usable with any insulating material—allowing for rapid prototyping of a variety of novel detector materials. We present the two-stage cryogenic amplifier design, preliminary voltage noise performance, and estimated charge resolution of 7.2 electrons.
Recommended Citation
Anczarski, J., Dubovskov, M., Fink, C. W., Kevane, S., Kurinsky, N., Mazumdar, A., Meijer, S. J., Phipps, A., Ronning, F., Rydstrom, I., Simchony, A., Smith, Z., Thomas, S., Watkins, S. L., & Young, B. (2024). Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors. Journal of Low Temperature Physics, 214(3), 256–262. https://doi.org/10.1007/s10909-023-03046-1
