Document Type
Article
Publication Date
1-21-2019
Publisher
American Institute of Physics
Abstract
We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm crystal of high purity silicon (∼20 kΩ cm) at temperatures between 500 mK and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the ⟨111⟩ crystal axis, and we present a phenomenological model of intervalley scattering which explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotropy, which is strongly dependent on both temperature and electric field strength. The observed effects can be explained by a warping of the valence bands for carrier energies near the spin-orbit splitting energy in silicon.
Recommended Citation
Moffatt, R. A., Kurinsky, N. A., Stanford, C., Allen, J., Brink, P. L., Cabrera, B., Cherry, M., Insulla, F., Ponce, F., Sundqvist, K., Yellin, S., Yen, J. J., & Young, B. A. (2019). Spatial imaging of charge transport in silicon at low temperature. Applied Physics Letters, 114(3), 032104. https://doi.org/10.1063/1.5049691
Comments
Copyright © 2019 American Institute of Physics Publishing. Reprinted with permission.