Temperature Dependent I–V and Resistance Characterization of SuperCDMS Germanium Crystals

Authors

B. Shank
D. Q. Nagasawa
J. J. Yen
M. Cherry
Betty A. Young, Santa Clara UniversityFollow

Document Type

Article

Publication Date

12-28-2011

Publisher

Springer

Abstract

We have built a versatile, compact ³He test facility to evaluate high-purity Ge (HPGe) SuperCDMS (Cryogenic Dark Matter Search) detectors. We are able to rapidly identify photolithographic or other defects in the thousands of W-Al transition edge sensors (TESs) on each detector and to evaluate the performance of the underlying substrate. We describe our simple method to measure current-voltage (I–V) characteristics and R vs. T behavior of HPGe detector crystals with resistances up to 100 GΩ. This provides a way to quickly perform diagnostic physics studies. Results provide critical data that give early warning that a crystal may not be suitable for the SuperCDMS underground experiment. Data from tests made on several kg-scale detectors are presented.

Recommended Citation

Shank, B., Nagasawa, D. Q., Yen, J. J., Cherry, M., & Young, B. A. (2012). Temperature Dependent I–V and Resistance Characterization of SuperCDMS Germanium Crystals. Journal of Low Temperature Physics, 167(3), 202–207. https://doi.org/10.1007/s10909-011-0449-7