Interface Analysis of Y-Ba-Cu-O Films on Al-Coated Si Substrates

Authors

T. Asano
K. Tran
A. S. Byrne
M. Mahmudur Rahman
Cary Y. Yang, Santa Clara UniversityFollow

Document Type

Article

Publication Date

3-27-1989

Publisher

American Institute of Physics Publishing

Abstract

Y‐Ba‐Cu‐O films were deposited on Al‐coated Si substrates by the plasma‐spray method. The Al buffer layer appears to be effective in yielding crack‐free adhesive Y‐Ba‐Cu‐O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of x‐ray microanalysis and x‐ray photoelectron spectroscopy confirm that the Al buffer forms an Al2O3 layer and prevents precipitation of Cu at the film/substrate interface.

Comments

Copyright © 1989 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

T. Asano, K. Tran, A.S. Byrne, M.M. Rahman, and C.Y. Yang, “Interface Analysis of Y-Ba-Cu-O Films on Al-Coated Si Substrates,” Applied Physics Letters 54, 1275-1277 (1989). https://doi.org/10.1063/1.101489