Simulation of Substrate Hot-Electron Injection
Document Type
Article
Publication Date
4-1990
Publisher
IEEE
Abstract
Electron trapping in thin oxide and interface state generation has been investigated using a constant-current stressing technique. Assuming finite-temperature Fowler-Nordheim tunneling, semiempirical simulations of voltage versus stress time behavior were obtained for an MOS diode. A trapped charge model was used to simulate voltage versus stress-time behavior. The comparison between measurement and simulation results yields information about trapped charges in the oxide and at the oxide-substrate interface. The model can serve as the basis for improved understanding of the more complex phenomenon of channel hot-carrier injection in MOS transistors.
Recommended Citation
F.E. Pagaduan, C.Y. Yang, T. Toyabe, Y. Nishioka, A. Hamada, Y. Igura, and E. Takeda, “Simulation of Substrate Hot-Electron Injection,” IEEE Transactions on Electron Devices 37, 994-998 (1990).
