Electrical characterization of metal‐insulator‐semiconductor diodes fabricated from laser‐ablated Yba2Cu3O7−δ/yttria‐stabilized zirconia films on Si substrates
American Institute of Physics Publishing
The purpose of this investigation is to study the electrical properties of the YBCO/YSZ/Si metal‐insulator‐semiconductor structure and the yttria‐stabilized zirconia (YSZ)/Si interface. The YBCO and YSZ layers were epitaxially grown in situ on Si by pulsed laser deposition. Current‐voltage measurements of devices fabricated on p‐type Si(100) showed a small leakage current density at 292 K, which decreased further at 80 K. Comparison of capacitance‐voltage measurements at 292 K for frequencies between 10 and 400 kHz showed a large variation of capacitance in the accumulation region demonstrating the presence of mobile ions in the YSZ layer. This variation is less pronounced at 80 K. A negative shift of about 5 V in threshold voltage from 292 to 80 K has been attributed to redistribution of charges in the YSZ buffer layer.
E.M. Ajimine, F.E. Pagaduan, M.M. Rahman, C.Y. Yang, H. Inokawa, D.K Fork, and T.H. Geballe, “Electrical characterization of metal‐insulator‐semiconductor diodes fabricated from laser‐ablated Yba2Cu3O7−δ/yttria‐stabilized zirconia films on Si substrates,” Applied Physics Letters 59, 2889-2891 (1991).