Determination of Density of Trap States at Y₂O₃-Stabilized ZrO₂/Si Interface of Yba₂Cu₃O_7-δ/Y₂O₃-Stabilized ZrO₂/Si Capacitors

Authors

Jianmin Qiao
Kuohsu Wang
Cary Y. Yang, Santa Clara UniversityFollow

Document Type

Article

Publication Date

3-28-1994

Publisher

American Institute of Physics Publishing

Abstract

Yba₂Cu₃O_7-δ/yttria‐stabilized zirconia (YSZ)/silicon superconductor‐insulator‐semiconductor capacitors are characterized with current‐voltage and capacitance‐voltage (C‐V) measurements at different temperatures between 223 and 80 K. As a result of ‘‘freezing’’ of mobile ions in YSZ, effects of trapped charge at the YSZ/Si interface dominate the device electrical properties at superconducting temperatures. Density of interface states and its temperature dependence are determined using a modified high frequency C‐V method, in which the temperature dependences of band gap, Fermi level, and active dopant and intrinsic carrier concentrations are considered. At superconducting temperatures, e.g., 80 K, the interface state density within the band gap is reduced to lower than 1×10¹¹ cm⁻² eV at midgap. The low interface state density at the YSZ/Si interface is important for acceptable performance and reliability devices made up of such capacitors.

Comments

Copyright © 1994 American Institute of Physics Publishing. Reprinted with permission.

Recommended Citation

J. Qiao, K. Wang, and C.Y. Yang, “Determination of Density of Trap States at Y₂O₃-Stabilized ZrO₂/Si Interface of Yba₂Cu₃O_7-δ/Y₂O₃-Stabilized ZrO₂/Si Capacitors, Applied Physics Letters 64, 1732-1734 (1994). https://doi.org/10.1063/1.111793