Donor complex formation due to a high-dose Ge implant into Si
American Institute of Physics Publishing
To investigate boron deactivation and/or donor complex formation due to a high‐dose Ge and C implantation and the subsequent solid phase epitaxy, SiGe and SiGeC layers were fabricated and characterized. Cross‐sectional transmission electron microscopy indicated that the SiGe layer with a peak Ge concentration of 5 at. % was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of the Ge as a result of strain relaxation. Photoluminescence (PL) results were found to be consistent with dopant deactivation due to Ge implantation and the subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at. %), the PL results support our previously proposed donor complex formation. These findings were confirmed by spreading resistance profiling. A model for donor complex formation is proposed.
A. Gupta, M.M. Rahman, J. Qiao, C.Y. Yang, S. Im, N.W. Cheung, and P.K.L. Yu, “Donor complex formation due to a high-dose Ge implant into Si,”, Journal of Applied Physics 75, 4252-4254 (1994).