Title
Contact resistance and reliability of 40 nm carbon nanotube vias
Document Type
Conference Proceeding
Publication Date
7-11-2016
Publisher
IEEE
Abstract
Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.
Recommended Citation
Vyas, A. A., Yang, C. Y., Wang, P., Changjian Zhou, & Yang Chai. (2016). Contact resistance and reliability of 40 nm carbon nanotube vias. 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 203–205. https://doi.org/10.1109/IITC-AMC.2016.7507732
Comments
IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)
23-26 May 2016
San Jose, CA, USA