Contact resistance and reliability of 40 nm carbon nanotube vias

Authors

Anshul A. Vyas, Santa Clara UniversityFollow
Cary Y. Yang, Santa Clara UniversityFollow
Phillip Wang
Changjian Zhou
Yang Chai

Document Type

Conference Proceeding

Publication Date

7-11-2016

Publisher

IEEE

Abstract

Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.

Comments

IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)
23-26 May 2016
San Jose, CA, USA

Recommended Citation

Vyas, A. A., Yang, C. Y., Wang, P., Changjian Zhou, & Yang Chai. (2016). Contact resistance and reliability of 40 nm carbon nanotube vias. 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 203–205. https://doi.org/10.1109/IITC-AMC.2016.7507732