Ion‐implanted charge collection contacts for high purity silicon detectors operated at 20 mK
American Institute of Physics
We have developed a technique for fabricating high resolution, ohmic contacts for cryogenic silicon detectors operated at temperatures well below 1 K. In this paper, we give a detailed description of the techniques used to fabricate these boron‐implanted contacts, and present characterization data obtained on 24 test samples studied during the design phase of our program. We then describe the fabrication and operation of a 23 g prototype silicon hybrid detector which simultaneously senses both the phonons and ionization produced by a single event, and which incorporates these new contacts into its design. Finally, we present data obtained using a radioactive source of 241Am and this detector operated at 20 mK, and conclude that the contacts are fully sufficient for applications in particle astrophysics as well as in many other areas of physics.
Young, B. A., & Yu, K. M. (1995). Ion‐implanted charge collection contacts for high purity silicon detectors operated at 20 mK. Review of Scientific Instruments, 66(3), 2625–2630. https://doi.org/10.1063/1.1145599