Title
Dilute Al–Mn alloys for superconductor device applications
Document Type
Conference Proceeding
Publication Date
3-11-2004
Publisher
Elsevier
Abstract
We discuss results on the superconducting and electron-transport properties of Mn-doped Al produced by sputter deposition. The critical temperature of Al has been systematically reduced to below 50 mK by doping with 1000–3000 ppm Mn. Values of the α parameter are in the range of 450–500, indicating sharp normal-to-superconductor transitions. This material is thus of significant interest for both transition-edge sensors operating in the 100 mK regime and superconductor/insulator/superconductor and superconductor/insulator/normal devices, in the latter case where appropriately doped Al–Mn replaces the normal metal.
Recommended Citation
Ruggiero, S. T., Williams, A., Rippard, W. H., Clark, A. M., Deiker, S. W., Young, B. A., Vale, L. R., & Ullom, J. N. (2004). Dilute Al–Mn alloys for superconductor device applications. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1), 274–276. https://doi.org/10.1016/j.nima.2003.11.236
Comments
LTD-10, 10th International Workshop on Low Temperature Detectors, Genoa, Italy 7-11