Direct Determination of Interface Trapped Charges
A technique to determine the interface trapped charge, Qit, from C-V and I-V measurements is introduced. This Qit technique is free from the assumptions used in the conventional methods for determining the density of interface traps, Dit. The technique is applied to current-stressed metal-oxide-semiconductor (MOS) capacitors with different oxide thicknesses and found to be useful in revealing donor- and acceptor-type characteristics of interface traps.
C.Y. Yang, H. Inokawa, and F.E. Pagaduan, “Direct Determination of Interface Trapped Charges,” Japanese Journal of Applied Physics 30, L888-890 (1991).