American Institute of Physics Publishing
Ultrathin silicon oxide film for nano-electromechanical system (NEMS) applications is investigated under electrostatic discharge (ESD) stress using a transmission line pulse (TLP) tester. The measured breakdown voltage and transient response are analyzed. The results show that the voltage stress time has a significant effect on the breakdown voltage. By shortening the stress time, the breakdown voltage increases by 2–3 times. With the area shrinking breakdown voltage increases, and there is a critical value, below which the breakdown voltage increases dramatically with decreasing area. It is possible to enhance the ESD robustness by using a multiple small-area dielectric layer structure. Shorten ESD pulse rise-time induces a higher overshoot current and then accelerates oxide failure, resulting in a lower breakdown voltage for a faster pulse.
H. Jin, S. Dong, M. Miao, J.J. Liou, and C.Y. Yang, “Breakdown voltage of ultrathin dielectric film subject to electrostatic discharge stress,” Journal of Applied Physics 110, 054516 (4 pp) (2011). https://doi.org/10.1063/1.3633527