Document Type
Article
Publication Date
4-1-1990
Publisher
American Physical Society
Abstract
The energy dependence of the ionization produced in silicon by recoiling silicon atoms was measured in the 4–54-keV energy interval. It is found that the fraction of the recoil energy that is dissipated as ionization follows an E1/2 dependence which agrees well with the predictions of the theory of Lindhard et al. [Mat. Fys. Medd. 33, 10 (1963)].
Recommended Citation
Zecher, P., Wang, D., Rapaport, J., Martoff, C. J., & Young, B. A. (1990). Energy deposition of energetic silicon atoms within a silicon lattice. Physical Review A, 41(7), 4058–4061. https://doi.org/10.1103/PhysRevA.41.4058
Comments
Copyright © 1990 American Physical Society. Reprinted with permission.