American Institute of Physics Publishing
Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium‐implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed. One is a misfit dislocation, and the other is a residual dislocation caused by ion bombardment. The p‐n junction formed in the SiGe layer has a leakage current three orders of magnitude larger than that of a pure Si p‐n junction fabricated with an identical process except for the Ge+ implantation. Carbon doping in the SiGe layer improves its crystalline quality and the junction characteristics.
A. Fukami, K. Shoji, T. Nagano, and C.Y. Yang, “Characterization of SiGe/Si Heterostructures Formed by Ge+ and C+ Implantation,” Applied Physics Letters 57, 2345-2347 (1990). https://doi.org/10.1063/1.103888