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American Institute of Physics Publishing


Improvement of crystalline quality in Si1-xGex formed by germanium ion implantation has been found. End‐of‐range defects were drastically reduced in number by lowering the substrate temperature during implantation with doses on the order of 1016 cm−2. This improvement was confirmed by electrical characterization of p‐n junctions formed in the SiGe layer as well as by transmission electron microscopy.


Copyright © 1992 American Institute of Physics Publishing. Reprinted with permission.



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